Data for "Targeted Chemical Pressure Yields Tunable Millimeter-Wave Dielectric "
Included here are figures and other relevant data from the paper "Targeted Chemical Pressure Yields Tunable Millimeter-Wave 5G Dielectric with Unparalleled Performance" published online in Nature Materials on 23 December 2019 (https://doi.org/10.1038/s41563-019-0564-4). Abstract: Epitaxial strain can unlock enhanced properties in oxide materials but restricts substrate choice and maximum film thickness, above which lattice relaxation and property degradation occur. Here we employ a chemical alternative to epitaxial strain by providing targeted chemical pressure, distinct from random doping, to induce a ferroelectric instability with the strategic introduction of barium into today's best millimeter-wave tunable dielectric, the epitaxially strained 50 nm thick n = 6 (SrTiO3)nSrO Ruddlesden-Popper grown on (110) DyScO3. The defect mitigating nature of (SrTiO3)nSrO results in unprecedented low loss at frequencies up to 125 GHz. No barium-containing Ruddlesden-Popper titanates are known, but this atomically-engineered superlattice material, (SrTiO3)n?m(BaTiO3)mSrO, enables low-loss, tunable dielectric properties to be achieved with lower epitaxial strain and a 200 % improvement in the figure of merit at commercially-relevant millimeter-wave frequencies. As tunable dielectrics are key constituents for emerging millimeter-wave high-frequency devices in telecommunications our findings could lead to higher performance adaptive and reconfigurable electronics at these frequencies.
Complete Metadata
| @type | dcat:Dataset |
|---|---|
| accessLevel | public |
| bureauCode |
[
"006:55"
]
|
| contactPoint |
{
"fn": "Eric Marksz",
"hasEmail": "mailto:eric.marksz@nist.gov"
}
|
| description | Included here are figures and other relevant data from the paper "Targeted Chemical Pressure Yields Tunable Millimeter-Wave 5G Dielectric with Unparalleled Performance" published online in Nature Materials on 23 December 2019 (https://doi.org/10.1038/s41563-019-0564-4). Abstract: Epitaxial strain can unlock enhanced properties in oxide materials but restricts substrate choice and maximum film thickness, above which lattice relaxation and property degradation occur. Here we employ a chemical alternative to epitaxial strain by providing targeted chemical pressure, distinct from random doping, to induce a ferroelectric instability with the strategic introduction of barium into today's best millimeter-wave tunable dielectric, the epitaxially strained 50 nm thick n = 6 (SrTiO3)nSrO Ruddlesden-Popper grown on (110) DyScO3. The defect mitigating nature of (SrTiO3)nSrO results in unprecedented low loss at frequencies up to 125 GHz. No barium-containing Ruddlesden-Popper titanates are known, but this atomically-engineered superlattice material, (SrTiO3)n?m(BaTiO3)mSrO, enables low-loss, tunable dielectric properties to be achieved with lower epitaxial strain and a 200 % improvement in the figure of merit at commercially-relevant millimeter-wave frequencies. As tunable dielectrics are key constituents for emerging millimeter-wave high-frequency devices in telecommunications our findings could lead to higher performance adaptive and reconfigurable electronics at these frequencies. |
| distribution |
[
{
"title": "DOI Access for Data for "Targeted Chemical Pressure Yields Tunable Millimeter-Wave Dielectric "",
"accessURL": "https://doi.org/10.18434/M31968"
},
{
"title": "Figure 1: DFT files for the Ba-containing STO Ruddlesden-Popper structures",
"format": "CIF",
"mediaType": "application/gzip",
"description": "A .TGZ compressed folder containing the information necessary to reproduce the Density Functional Theory (DFT) simulations of the Ba-containing STO Ruddlesden-Popper structures. The files are included as .CIF files, for the paraelectric/ferroelectric films spanning from n=2 to n=6. Information in this folder can be extracted via archiving tools such as Gzip.",
"downloadURL": "https://data.nist.gov/od/ds/7619E70B50E70FE5E05324570681A1921968/Fig1_DFT_BSTO_RP_structures_CIF.tgz"
},
{
"title": "Figure 2: Data for the X-Ray Diffraction curves of the Ba-containing STO Ruddlesden-Popper films (n=2-6)",
"format": "CSV",
"mediaType": "application/vnd.ms-excel",
"description": "This CSV file contains the raw data for the X-ray diffraction curves shown in Figure 2. These curves show the relationship between diffracted angle 2theta (deg) and detector count intensity (a.u.) for the 50 nm Ba-containing STO Ruddlesden-Popper thin films spanning n=2 to n=6.",
"downloadURL": "https://data.nist.gov/od/ds/7619E70B50E70FE5E05324570681A1921968/Fig2_X-ray_Diffraction_50_nm_samples.csv"
},
{
"title": "Figure 4(a): Data for the complex dielectric constant (K11) vs. frequency curves for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6",
"format": "CSV",
"mediaType": "application/vnd.ms-excel",
"description": "This CSV file contains the raw data for the complex dielectric constant (K11) vs. frequency curves shown in Figure 4(a) for the Ba-containing STO Ruddlesden-Popper films from n=2-6.",
"downloadURL": "https://data.nist.gov/od/ds/7619E70B50E70FE5E05324570681A1921968/Fig4a_Complex_permittivity_100_nm_n6.csv"
},
{
"title": "Figure 3(a): Data for the dielectric constant (K11) vs. temperature curves for the Ba-containing STO Ruddlesden-Popper films from n=2-6",
"format": "CSV",
"mediaType": "application/vnd.ms-excel",
"description": "This CSV file contains the raw data for the dielectric constant (K11) vs. temperature curves shown in Figure 3(a) for the Ba-containing STO Ruddlesden-Popper films from n=2-6. Data is included for the 10 kHz, 100 kHz, and 1 MHz traces.",
"downloadURL": "https://data.nist.gov/od/ds/7619E70B50E70FE5E05324570681A1921968/Fig3a_Dielectric_Const_vs_Temp_Freq_50_nm_samples.csv"
},
{
"title": "Figure 4(b): Data for the dielectric constant tunability vs. applied bias electric field curves for the 100 nm Ba-containing STO Ruddlesden-Popper films from n=6",
"format": "CSV",
"mediaType": "application/vnd.ms-excel",
"description": "This CSV file contains the raw data for the dielectric constant tunability vs applied bias electric field curves shown in Figure 4(b) for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6. Data is included for 5 GHz, 20 GHz, and 40 GHz traces.",
"downloadURL": "https://data.nist.gov/od/ds/7619E70B50E70FE5E05324570681A1921968/Fig4b_Film_Tunability_100_nm_n6.csv"
},
{
"title": "Figure 3(d): Data for the energy vs. total ionic distortion curves for the Ba-containing and Ba-free STO Ruddlesden-Popper films with n = 2,4,6",
"format": "CSV",
"mediaType": "application/vnd.ms-excel",
"description": "This CSV file contains the raw data for the energy vs. total ionic distortion curves shown in Figure 3(d) for the Ba-containing STO Ruddlesden-Popper films from n=2-6. These curves map out the "double potential well" of the materials. "Total ionic distortion" can be thought of as a proxy for polarization.",
"downloadURL": "https://data.nist.gov/od/ds/7619E70B50E70FE5E05324570681A1921968/Fig3d_potential_well_n246.csv"
},
{
"title": "Figure 3(b): Data for the ferroelectric transition temperature (Tc) vs. series number (n) plots for the Ba-containing STO Ruddlesden-Popper films from n=2-6",
"format": "CSV",
"mediaType": "application/vnd.ms-excel",
"description": "This CSV file contains the raw data for the ferroelectric transition temperature (Tc) vs. series number (n) plots shown in Figure 3(b) for the Ba-containing STO Ruddlesden-Popper films from n=2-6.",
"downloadURL": "https://data.nist.gov/od/ds/7619E70B50E70FE5E05324570681A1921968/Fig3b_Tc_Comparison.csv"
},
{
"title": "Figure 4(c): Data for the figure of merit (FOM) vs. frequency curves for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6",
"format": "CSV",
"mediaType": "application/vnd.ms-excel",
"description": "This CSV file contains the raw data for the figure of merit (FOM) vs. frequency curve shown in the inset of Figure 4(c) for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6.",
"downloadURL": "https://data.nist.gov/od/ds/7619E70B50E70FE5E05324570681A1921968/Fig4c_FOM_100_nm_n6.csv"
},
{
"title": "Figure 3(c): Data for the lattice parameter (a) / strain vs. series number (n) plot for the Ba-containing STO Ruddlesden-Popper films from n=2-6",
"format": "CSV",
"mediaType": "application/vnd.ms-excel",
"description": "This CSV file contains the raw data for the lattice parameter (a) / strain vs. series number (n) plot shown in Figure 3(c) for the Ba-containing STO Ruddlesden-Popper films from n=2-6.",
"downloadURL": "https://data.nist.gov/od/ds/7619E70B50E70FE5E05324570681A1921968/Fig3c_lattice_w_wo_ba.csv"
},
{
"title": "Figure 4(a)[inset]: Data for the loss tangent vs. frequency curve for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6",
"format": "CSV",
"mediaType": "application/vnd.ms-excel",
"description": "This CSV file contains the raw data for the loss tangent vs. frequency curves shown in the inset of Figure 4(a) for the 100 nm Ba-containing STO Ruddlesden-Popper films with n=6.",
"downloadURL": "https://data.nist.gov/od/ds/7619E70B50E70FE5E05324570681A1921968/Fig4a_inset_Loss_tangent_100_nm_n6.csv"
},
{
"mediaType": "text/plain",
"downloadURL": "https://data.nist.gov/od/ds/7619E70B50E70FE5E05324570681A1921968/README.txt"
},
{
"mediaType": "text/plain",
"downloadURL": "https://data.nist.gov/od/ds/7619E70B50E70FE5E05324570681A1921968/README.txt.sha256"
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|
| identifier | 7619E70B50E70FE5E05324570681A1921968 |
| issued | 2019-11-22 |
| keyword |
[
"5G",
"DFT",
"barium",
"density functional theory",
"deposition",
"dielectric constant",
"filters",
"frequency-agile",
"loss tangent",
"low loss",
"materials",
"microwave",
"millimeter-wave",
"molecular beam epitaxy",
"permittivity",
"physical vapor",
"resonators",
"ruddlesden-popper",
"strain engineering",
"strontium",
"superlattice",
"targeted chemical pressure",
"titanate",
"tunability"
]
|
| landingPage | https://data.nist.gov/od/id/7619E70B50E70FE5E05324570681A1921968 |
| language |
[
"en"
]
|
| license | https://www.nist.gov/open/license |
| modified | 2019-11-20 00:00:00 |
| programCode |
[
"006:045"
]
|
| publisher |
{
"name": "National Institute of Standards and Technology",
"@type": "org:Organization"
}
|
| theme |
[
"Advanced Communications:Wireless (RF)",
"Electronics:Electromagnetics",
"Electronics:Optoelectronics",
"Electronics:Thin-film electronics",
"Materials:Ceramics",
"Materials:Materials characterization",
"Metrology:Electrical/electromagnetic metrology",
"Physics:Condensed matter"
]
|
| title | Data for "Targeted Chemical Pressure Yields Tunable Millimeter-Wave Dielectric " |
