On-Chip Frequency Conversion Using Kinetic Inductance Within a Coplanar Waveguide, IEEE Transactions on Applied Superconductivity 2024

                                            [
  "006:55"
]
                                        

                                            {
  "fn": "Nathan Flowers-Jacobs",
  "hasEmail": "mailto:nathan.flowers-jacobs@nist.gov"
}
                                        

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    "description": "Data used in Figure 1 of [1]. Harmonics are measured with a VNA by offsetting the frequency provided by the signal generator and the measurement frequency of the VNA. We plot example second and third harmonic generation data as a function of dc bias current using a fundamental tone at 9.87 GHz. See [1] for additional information.",
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    "description": "Data used in Figure 1 of [1]. Harmonics are measured with a VNA by offsetting the frequency provided by the signal generator and the measurement frequency of the VNA. We plot example second and third harmonic generation data as a function of dc bias current using a fundamental tone at 9.87 GHz. See [1] for additional information.",
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    "description": "Data used in Figure 3 of [1]. We show the measured results for the distributed capacitance and inductance of the coplanar waveguide, plotted versus dc current (x-axis) as the fractional change (y-axis) from the zero-current values of 132.2 pF/m and 999.6 nH/m. See [1] for additional information.",
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    "description": "Data used in Figure 3 of [1]. We show the measured results for the distributed capacitance and inductance of the coplanar waveguide, plotted versus dc current (x-axis) as the fractional change (y-axis) from the zero-current values of 132.2 pF/m and 999.6 nH/m. See [1] for additional information.",
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    "description": "Data used in Figure 4 of [1]. Time domain reflectometry (TDR) measurements of the system showing system characteristic impedance versus time/distance (a) are used to determine changes in the electrical length of the chip as a function of dc bias current based on a sharp feature at the transition off of the chip (b). This change is a direct, independent measurement of the quadratic nonlinearity coefficient of the inductance (c). See [1] for additional information.",
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    "description": "Data used in Figure 4 of [1]. Time domain reflectometry (TDR) measurements of the system showing system characteristic impedance versus time/distance (a) are used to determine changes in the electrical length of the chip as a function of dc bias current based on a sharp feature at the transition off of the chip (b). This change is a direct, independent measurement of the quadratic nonlinearity coefficient of the inductance (c). See [1] for additional information.",
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    "mediaType": "application/octet-stream",
    "description": "Data used in Figure 4 of [1]. Time domain reflectometry (TDR) measurements of the system showing system characteristic impedance versus time/distance (a) are used to determine changes in the electrical length of the chip as a function of dc bias current based on a sharp feature at the transition off of the chip (b). This change is a direct, independent measurement of the quadratic nonlinearity coefficient of the inductance (c). See [1] for additional information.",
    "downloadURL": "https://data.nist.gov/od/ds/mds2-3248/TAS24A_Fig4b.fig"
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    "mediaType": "text/plain",
    "description": "Data used in Figure 4 of [1]. Time domain reflectometry (TDR) measurements of the system showing system characteristic impedance versus time/distance (a) are used to determine changes in the electrical length of the chip as a function of dc bias current based on a sharp feature at the transition off of the chip (b). This change is a direct, independent measurement of the quadratic nonlinearity coefficient of the inductance (c). See [1] for additional information.",
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    "mediaType": "application/octet-stream",
    "description": "Data used in Figure 4 of [1]. Time domain reflectometry (TDR) measurements of the system showing system characteristic impedance versus time/distance (a) are used to determine changes in the electrical length of the chip as a function of dc bias current based on a sharp feature at the transition off of the chip (b). This change is a direct, independent measurement of the quadratic nonlinearity coefficient of the inductance (c). See [1] for additional information.",
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    "mediaType": "text/plain",
    "description": "Data used in Figure 4 of [1]. Time domain reflectometry (TDR) measurements of the system showing system characteristic impedance versus time/distance (a) are used to determine changes in the electrical length of the chip as a function of dc bias current based on a sharp feature at the transition off of the chip (b). This change is a direct, independent measurement of the quadratic nonlinearity coefficient of the inductance (c). See [1] for additional information.",
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    "mediaType": "text/plain",
    "description": "Data used in Figure 6 of [1]. We plot the second harmonic (a) and third harmonic (b) conversion efficiency at the optimum dc bias current and fundamental tone RF power plotted versus measurement frequency. The measurement was repeated ten times. The standard deviation of each data point is less than or equal to 0.1% in (a) and 0.01% in (b). See [1] for additional information.",
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    "mediaType": "application/octet-stream",
    "description": "Data used in Figure 6 of [1]. We plot the second harmonic (a) and third harmonic (b) conversion efficiency at the optimum dc bias current and fundamental tone RF power plotted versus measurement frequency. The measurement was repeated ten times. The standard deviation of each data point is less than or equal to 0.1% in (a) and 0.01% in (b). See [1] for additional information.",
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    "mediaType": "text/plain",
    "description": "Data used in Figure 6 of [1]. We plot the second harmonic (a) and third harmonic (b) conversion efficiency at the optimum dc bias current and fundamental tone RF power plotted versus measurement frequency. The measurement was repeated ten times. The standard deviation of each data point is less than or equal to 0.1% in (a) and 0.01% in (b). See [1] for additional information.",
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    "description": "Data used in Figure 8 of [1]. We plot the measured reflection S11 data used to calculate the distributed inductance L′ and capacitance C′ based on the minima (red circles) and maxima (green circles) reflectance. See [1] for additional information.",
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    "mediaType": "text/plain",
    "description": "Data used in Figure 8 of [1]. We plot the measured reflection S11 data used to calculate the distributed inductance L′ and capacitance C′ based on the minima (red circles) and maxima (green circles) reflectance. See [1] for additional information.",
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    "description": "Simulated data used in Figure 7 of [1]. We plot the simulated second harmonic conversion efficiency versus frequency to compare the measured 87 Ω CPW (blue) to a 50 Ω CPW (red) that is better matched to the environment. For the matched CPW, the ripple behavior is eliminated and broadband conversion efficiencies over 10% are expected for second harmonic generation frequencies from 17 GHz to over 40 GHz. See [1] for additional information.",
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    "mediaType": "text/plain",
    "description": "Simulated data used in Figure 7 of [1]. We plot the simulated second harmonic conversion efficiency versus frequency to compare the measured 87 Ω CPW (blue) to a 50 Ω CPW (red) that is better matched to the environment. For the matched CPW, the ripple behavior is eliminated and broadband conversion efficiencies over 10% are expected for second harmonic generation frequencies from 17 GHz to over 40 GHz. See [1] for additional information.",
    "downloadURL": "https://data.nist.gov/od/ds/mds2-3248/TAS24A_Fig7a.txt"
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    "mediaType": "application/octet-stream",
    "description": "Simulated data used in Figure 7 of [1]. We plot the simulated second harmonic conversion efficiency versus frequency to compare the measured 87 Ω CPW (blue) to a 50 Ω CPW (red) that is better matched to the environment. For the matched CPW, the ripple behavior is eliminated and broadband conversion efficiencies over 10% are expected for second harmonic generation frequencies from 17 GHz to over 40 GHz. See [1] for additional information.",
    "downloadURL": "https://data.nist.gov/od/ds/mds2-3248/TAS24A_Fig7b.fig"
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    "mediaType": "text/plain",
    "description": "Simulated data used in Figure 7 of [1]. We plot the simulated second harmonic conversion efficiency versus frequency to compare the measured 87 Ω CPW (blue) to a 50 Ω CPW (red) that is better matched to the environment. For the matched CPW, the ripple behavior is eliminated and broadband conversion efficiencies over 10% are expected for second harmonic generation frequencies from 17 GHz to over 40 GHz. See [1] for additional information.",
    "downloadURL": "https://data.nist.gov/od/ds/mds2-3248/TAS24A_Fig7b.txt"
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]
                                        

                                            [
  "Kinetic inductance",
  "cryogenic measurements",
  "frequency conversion",
  "superconductive electronics"
]
                                        

                                            [
  "en"
]
                                        

                                            [
  "006:045"
]
                                        

                                            {
  "name": "National Institute of Standards and Technology",
  "@type": "org:Organization"
}
                                        

                                            [
  "Electronics:Superconducting electronics"
]