Patent AT-E400060-T1: [Translated] IMPROVED DEPOSITION PROCESS OF SEMICONDUCTOR LAYERS
Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.
Complete Metadata
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| description | Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes. |
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| issued | 2025-09-05 |
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| modified | 2025-09-06 |
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| title | Patent AT-E400060-T1: [Translated] IMPROVED DEPOSITION PROCESS OF SEMICONDUCTOR LAYERS |
