Patent AT-E400900-T1: [Translated] METHOD FOR PRODUCING A PHOTOVOLTAIC CELL BASED ON THIN FILM SILICON
The invention concerns a method for making a photovoltaic cell based on thin film silicon, which consists in providing a heterojunction by depositing on a support at least one first P- (or N-) doped amorphous silicon layer (13) and a second N- (or P-) doped amorphous silicon layer (14), in crystallizing, at least partly, the at least one first layer (13) using a technology for crystallizing silicon by pulsed electronic beam.
Complete Metadata
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| description | The invention concerns a method for making a photovoltaic cell based on thin film silicon, which consists in providing a heterojunction by depositing on a support at least one first P- (or N-) doped amorphous silicon layer (13) and a second N- (or P-) doped amorphous silicon layer (14), in crystallizing, at least partly, the at least one first layer (13) using a technology for crystallizing silicon by pulsed electronic beam. |
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| issued | 2025-09-05 |
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| title | Patent AT-E400900-T1: [Translated] METHOD FOR PRODUCING A PHOTOVOLTAIC CELL BASED ON THIN FILM SILICON |
