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Patent AT-E401671-T1: [Translated] HALL EFFECT ELEMENT WITH INTEGRATED DEVIATION CONTROL AND METHOD FOR OPERATING SUCH AN ELEMENT FOR REDUCING THE ZERO POINT DEVIATION
A Hall-effect element includes an isolating layer and an active layer of a first electrical conductivity type disposed on the isolating layer, the active layer having a surface. A first set of contacts is disposed in contact with the surface along a first axis, and a second set of contacts is disposed in contact with the surface along a second axis transverse to the first axis. An insulating layer is disposed on the surface. A metal control field plate is disposed on the insulating layer and is coupleable to a voltage source to control the accumulation of charge carriers at the surface of the active layer to vary the resistance of the active layer. Also, a method is provided for reducing null offset in a Hall-effect element. The method includes the steps of providing an isolating layer, disposing an active layer of a first electrical conductivity type on the isolating layer, the active layer having a surface, disposing a first set of contacts on the surface along a first axis, disposing a second set of contacts on the surface along a second axis transverse to the first axis; and disposing an insulating layer on the surface. A voltage is applied across the insulating layer to control the accumulation of charge carriers at the surface to vary the resistance of the active layer.
Complete Metadata
| @type | dcat:Dataset |
|---|---|
| accessLevel | public |
| bureauCode |
[
"009:25"
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| contactPoint |
{
"fn": "NIH/NCBI Data Team",
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"hasEmail": "mailto:info@ncbi.nlm.nih.gov"
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|
| description | A Hall-effect element includes an isolating layer and an active layer of a first electrical conductivity type disposed on the isolating layer, the active layer having a surface. A first set of contacts is disposed in contact with the surface along a first axis, and a second set of contacts is disposed in contact with the surface along a second axis transverse to the first axis. An insulating layer is disposed on the surface. A metal control field plate is disposed on the insulating layer and is coupleable to a voltage source to control the accumulation of charge carriers at the surface of the active layer to vary the resistance of the active layer. Also, a method is provided for reducing null offset in a Hall-effect element. The method includes the steps of providing an isolating layer, disposing an active layer of a first electrical conductivity type on the isolating layer, the active layer having a surface, disposing a first set of contacts on the surface along a first axis, disposing a second set of contacts on the surface along a second axis transverse to the first axis; and disposing an insulating layer on the surface. A voltage is applied across the insulating layer to control the accumulation of charge carriers at the surface to vary the resistance of the active layer. |
| distribution |
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"@type": "dcat:Distribution",
"title": "Official Data Source",
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"description": "Access the complete Patent AT-E401671-T1: [Translated] HALL EFFECT ELEMENT WITH INTEGRATED DEVIATION CONTROL AND METHOD FOR OPERATING SUCH AN ELEMENT FOR REDUCING THE ZERO POINT DEVIATION on the official website.",
"downloadURL": "https://pubchem.ncbi.nlm.nih.gov/patent/AT-E401671-T1"
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|
| identifier | https://healthdata.gov/api/views/muiy-b4yh |
| issued | 2025-09-05 |
| keyword |
[
"chemistry",
"innovation",
"patent",
"pubchem",
"research"
]
|
| landingPage | https://healthdata.gov/d/muiy-b4yh |
| modified | 2025-09-06 |
| programCode |
[
"009:066"
]
|
| publisher |
{
"name": "National Center for Biotechnology Information (NCBI)",
"@type": "org:Organization"
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|
| theme |
[
"NIH"
]
|
| title | Patent AT-E401671-T1: [Translated] HALL EFFECT ELEMENT WITH INTEGRATED DEVIATION CONTROL AND METHOD FOR OPERATING SUCH AN ELEMENT FOR REDUCING THE ZERO POINT DEVIATION |