Prognostics of Power MOSFET
This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and Gaussian process regression to perform prognostics. The approach is validated with experiments on 100V power MOSFETs. The failure mechanism for the stress conditions is determined to be die-attachment degradation. Change in ON-state resistance is used as a precursor of failure due to its dependence on junction temperature. The experimental data is augmented with a finite element analysis simulation that is based on a two-transistor model. The simulation assists in the interpretation of the degradation phenomena and SOA (safe operation area) change.
Complete Metadata
| bureauCode |
[ "026:00" ] |
|---|---|
| identifier | DASHLINK_783 |
| issued | 2013-06-19 |
| landingPage | https://c3.nasa.gov/dashlink/resources/783/ |
| programCode |
[ "026:029" ] |
