Supporting Data for Selected Area Electron Beam Induced Deposition of Pt and W for EBSD Backgrounds
These are the unprocessed electron back scatter diffraction patterns (EBSPs) collected from the mesas of electron beam induced deposition (EBID) material, in addition to the Mathematica notebook used to process the images. Each of the 12 EBID mesa has 10 EBSPs collected at 20 kV and 10 kV, in addition to several longer line scans that step from the silicon substrate onto the EBID mesa.
Complete Metadata
| @type | dcat:Dataset |
|---|---|
| accessLevel | public |
| bureauCode |
[
"006:55"
]
|
| contactPoint |
{
"fn": "William Osborn",
"hasEmail": "mailto:william.osborn@nist.gov"
}
|
| description | These are the unprocessed electron back scatter diffraction patterns (EBSPs) collected from the mesas of electron beam induced deposition (EBID) material, in addition to the Mathematica notebook used to process the images. Each of the 12 EBID mesa has 10 EBSPs collected at 20 kV and 10 kV, in addition to several longer line scans that step from the silicon substrate onto the EBID mesa. |
| distribution |
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|
| identifier | 77D21EEB60F37A2BE053245706819FDB1978 |
| keyword |
[
"EBID",
"EBSD",
"Electron Back Scatter Diffraction",
"Electron Beam Induced Deposition",
"Pt",
"W",
"background subtraction",
"flat field"
]
|
| landingPage | https://data.nist.gov/od/id/77D21EEB60F37A2BE053245706819FDB1978 |
| language |
[
"en"
]
|
| license | https://www.nist.gov/open/license |
| modified | 2018-10-17 |
| programCode |
[
"006:045"
]
|
| publisher |
{
"name": "National Institute of Standards and Technology",
"@type": "org:Organization"
}
|
| theme |
[
"Electronics:Semiconductors",
"Materials:Materials characterization",
"Nanotechnology:Nanomechanics",
"Nanotechnology:Nanometrology"
]
|
| title | Supporting Data for Selected Area Electron Beam Induced Deposition of Pt and W for EBSD Backgrounds |
