Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure
This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect tran- sistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based).
Complete Metadata
| @type | dcat:Dataset |
|---|---|
| accessLevel | public |
| accrualPeriodicity | irregular |
| bureauCode |
[
"026:00"
]
|
| contactPoint |
{
"fn": "Miryam Strautkalns",
"@type": "vcard:Contact",
"hasEmail": "mailto:miryam.strautkalns@nasa.gov"
}
|
| description | This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect tran- sistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based). |
| distribution |
[
{
"@type": "dcat:Distribution",
"title": "2010_PHM_MOSFET.pdf",
"format": "PDF",
"mediaType": "application/pdf",
"description": "2010_PHM_MOSFET.pdf",
"downloadURL": "https://c3.nasa.gov/dashlink/static/media/publication/2010_PHM_MOSFET.pdf"
}
]
|
| identifier | DASHLINK_723 |
| issued | 2013-05-09 |
| keyword |
[
"ames",
"dashlink",
"nasa"
]
|
| landingPage | https://c3.nasa.gov/dashlink/resources/723/ |
| modified | 2025-03-31 |
| programCode |
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|
| publisher |
{
"name": "Dashlink",
"@type": "org:Organization"
}
|
| title | Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure |
