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Insulated-Gate Bipolar Transistor (IGBT) Accelerated Aging

Published by PCoE | National Aeronautics and Space Administration | Metadata Last Checked: February 14, 2026 | Last Modified: 2025-05-29
Preliminary data from thermal overstress accelerated aging using the aging and characterization system. The data set contains aging data from 6 devices, one device aged with DC gate bias and the rest aged with a squared signal gate bias. Several variables are recorded and, in some cases, high-speed measurements of gate voltage, collector-emitter voltage, and collector current are available. The data set is provided by the NASA Prognostics Center of Excellence (PCoE).

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